Kioxia Develops Core Technology that Will Allow the Practical Implementation of High-density, Low-power 3D DRAM

(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was presented at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, USA, on December 10, and has the potential to reduce power consumption across a wide range of applications, including AI servers and IoT components.

In the era of AI, there is growing demand for DRAM with larger capacity and lower power consumption that can process large amounts of data. Traditional DRAM technology is reaching the physical limits of memory cell size scaling, prompting research into the 3D stacking of memory cells to provide additional capacity. The use of single-crystal silicon as the channel material for transistors in stacked memory cells, as is the case with conventional DRAM, drives up manufacturing costs, and the power required to refresh the memory cells increases proportionally to the memory capacity.

At last year’s IEDM, we announced the development of Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) technology that uses vertical transistors made of oxide-semiconductors. In this year's presentation, we showcased technology of highly stackable oxide-semiconductor channel transistors allowing 3D stacking of OCTRAM, verifying the operation of transistors stacked in eight layers.

This new technology stacks mature silicon-oxide and silicon-nitride films and replaces the silicon-nitride region with an oxide-semiconductor (InGaZnO) to simultaneously form vertical layers of horizontally-stacked transistors. We have also introduced a novel 3D memory cell structure capable of scaling the vertical pitch. These manufacturing processes and structures are expected to overcome the cost challenges of achieving 3D stacking of memory cells.

Additionally, it is expected that the refresh power can be reduced thanks to the low off-current characteristics of oxide-semiconductors. We have demonstrated high on-current (more than 30μA) and ultra-low off-current (less than 1aA, 10^-18A) capabilities for the horizontal transistors formed by the replacement process. Moreover, we have successfully fabricated an 8-layer stack of horizontal transistors and confirmed the successful operation of the transistors within that structure.

At Kioxia Corporation we will continue our research and development of this technology in order to realize the deployment of 3D DRAM in real-world applications.

* This announcement has been prepared to provide information on our business and does not constitute or form part of an offer or invitation to sell or a solicitation of an offer to buy or subscribe for or otherwise acquire any securities in any jurisdiction or an inducement to engage in investment activity nor shall it form the basis of or be relied on in connection with any contract thereof.

* Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

About Kioxia

Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.

View source version on businesswire.com: https://www.businesswire.com/news/home/20251211322385/en/